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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

Name: BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA 50 V NChannel SOT23
Brand: ONSEMI
Price: 1 USD

Brand Name : ONSEMI

Model Number : BSS138LT1G

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

VDSS : 50 Vdc

VGS : ± 20 Vdc

I D : 200 mA

PD : 225 mW

TL : 260 °C

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Power MOSFET 200 mA, 50 V N−Channel SOT−23

Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Features BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

• Pb−Free Packages are Available

• Low Threshold Voltage (VGS(th):

0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications

• Miniature SOT−23 Surface Mount Package Saves Board Space

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	50	Vdc
Gate−to−Source Voltage − Continuous	V_GS	± 20	Vdc
Total Power Dissipation @ TA = 25°C	P_D	225	mW
Operating and Storage Temperature Range	T_J, T_stg	− 55 to 150	°C
Thermal Resistance − Junction−to−Ambient	R_JA	556	°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds	TL	260	°C

BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

Product Tags:

power mosfet ic

silicon power transistors

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