SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET

General Features

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx21NM60N is realized with the second generation. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

APPLICATIONS

It's very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Table 2: Order Codes

Table 3: Absolute Maximum ratings

() Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS

Table 4: Thermal Data

Table 5: Avalanche Characteristics

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SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A Images